M29W640DB70ZA6T datasheet(5/49 Pages) STMICROELECTRONICS

Part #	M29W640DB70ZA6T

Description	64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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M29W640DT, M29W640DB

SUMMARY DESCRIPTION

The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16)

non-volatile memory that can be read, erased and

reprogrammed. These operations can be per-

formed using a single low voltage (2.7 to 3.6V)

supply. On power-up the memory defaults to its

Read mode.

The memory is divided into blocks that can be

erased independently so it is possible to preserve

valid data while old data is erased. Blocks can be

protected in units of 256 KByte (generally groups

of four 64 KByte blocks), to prevent accidental

Program or Erase commands from modifying the

memory. Program and Erase commands are writ-

ten to the Command Interface of the memory. An

on-chip Program/Erase Controller simplifies the

process of programming or erasing the memory by

taking care of all of the special operations that are

required to update the memory contents. The end

of a program or erase operation can be detected

and any error conditions identified. The command

set required to control the memory is consistent

with JEDEC standards.

The device features an asymmetrical blocked ar-

chitecture. The device has an array of 135 blocks:

■

8 Parameters Blocks of 8 KBytes each (or

4KWords each)

■

127 Main Blocks of 64 KBytes each (or

32 KWords each)

M29W640DT has the Parameter Blocks at the top

of

the

memory

address

space

while

the

M29W640DB locates the Parameter Blocks start-

ing from the bottom.

The M29W640D has an extra block, the Extended

Block, (of 32 KWords in x16 mode or of 64 KBytes

in x8 mode) that can be accessed using a dedicat-

ed command. The Extended Block can be protect-

ed and so is useful for storing security information.

However the protection is not reversible, once pro-

tected the protection cannot be undone.

Chip Enable, Output Enable and Write Enable sig-

nals control the bus operation of the memory.

They allow simple connection to most micropro-

cessors, often without additional logic.

The VPP/WP signal is used to enable faster pro-

gramming of the device, enabling double word

programming. If this signal is held at VSS, the boot

block, and its adjacent parameter block, are pro-

tected from program and erase operations.

The memory is delivered with all the bits erased (set

to 1).

Figure 2. Logic Diagram

Table 1. Signal Names

A0-A21

Address Inputs

DQ0-DQ7

Data Inputs/Outputs

DQ8-DQ14

Data Inputs/Outputs

DQ15A–1

(or DQ15)

Data Input/Output or Address Input

(or Data Input/Output)

E

Chip Enable

G

Output Enable

W

Write Enable

RP

Reset/Block Temporary Unprotect

RB

Ready/Busy Output

BYTE

Byte/Word Organization Select

VCC

Supply Voltage

VPP/WP

Supply Voltage for Fast Program

(optional) or Write Protect

VSS

Ground

NC

Not Connected Internally

AI05733

22

A0-A21

W

DQ0-DQ14

VCC

M29W640DT

M29W640DB

E

VSS

15

G

RP

DQ15A–1

BYTE

RB

VPP/WP

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