M29W160BT, M29W160BB

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SUMMARY DESCRIPTION

The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16)

non-volatile memory that can be read, erased and

reprogrammed. These operations can be per-

formed using a single low voltage (2.7 to 3.6V)

supply. On power-up the memory defaults to its

Read mode where it can be read in the same way

as a ROM or EPROM.

The memory is divided into blocks that can be

erased independently so it is possible to preserve

valid data while old data is erased. Each block can

be protected independently to prevent accidental

Program or Erase commands from modifying the

memory. Program and Erase commands are writ-

ten to the Command Interface of the memory. An

on-chip Program/Erase Controller simplifies the

process of programming or erasing the memory by

taking care of all of the special operations that are

required to update the memory contents.

Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may

cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions

above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-

tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-

ity documents.

2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns during transitions.

Symbol

Parameter

Value

Unit

Ambient Operating Temperature (Temperature Range Option 1)

0 to 70

°C

Ambient Operating Temperature (Temperature Range Option 6)

–40 to 85

°C

Temperature Under Bias

–50 to 125

°C

Storage Temperature

–65 to 150

°C

(2)

Input or Output Voltage

–0.6 to 4

V

Supply Voltage

–0.6 to 4

V

Identification Voltage

–0.6 to 13.5

V

The end of a program or erase operation can be

detected and any error conditions identified. The

command set required to control the memory is

consistent with JEDEC standards.

The blocks in the memory are asymmetrically ar-

ranged, see Tables 3 and 4, Block Addresses. The

first or last 64 Kbytes have been divided into four

additional blocks. The 16 Kbyte Boot Block can be

used for small initialization code to start the micro-

processor, the two 8 Kbyte Parameter Blocks can

be used for parameter storage and the remaining

32K is a small Main Block where the application

may be stored.

Chip Enable, Output Enable and Write Enable sig-

nals control the bus operation of the memory.

They allow simple connection to most micropro-

cessors, often without additional logic.

The memory is offered in TSOP48 (12 x 20mm),

SO44 and LFBGA48 (0.8mm pitch) packages and

it is supplied with all the bits erased (set to ’1’).