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M29W040B70N1 Datasheet(PDF) 1 Page - STMicroelectronics

Part # M29W040B70N1
Description  4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M29W040B70N1 Datasheet(HTML) 1 Page - STMicroelectronics

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September 2005
M29W040B
4 Mbit (512Kb x8, Uniform Block)
Low Voltage Single Supply Flash Memory
■
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
■
ACCESS TIME: 55ns
■
PROGRAMMING TIME
– 10µs per Byte typical
■
8 UNIFORM 64 Kbytes MEMORY BLOCKS
■
PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
■
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
■
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■
LOW POWER CONSUMPTION
– Standby and Automatic Standby
■
100,000 PROGRAM/ERASE CYCLES per
BLOCK
■
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
■
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: E3h
■
ECOPACK® PACKAGES AVAILABLE
TSOP32 (N)
8 x 20mm
PLCC32 (K)
TSOP32 (NZ)
8 x 14mm
Figure 1. Logic Diagram
AI02953
19
A0-A18
W
DQ0-DQ7
VCC
M29W040B
G
E
VSS
8


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