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M39432-10VNC6T Datasheet(PDF) 4 Page - STMicroelectronics |
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M39432-10VNC6T Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 28 page  M39432 4/28 This open drain output can be wire-ORed, using an external pull-up resistor, when several M39xxx devices are used together. VCC Supply Voltage The VCC Supply Voltage supplies the power for the device. The M39432 cannot be written when the VCC Supply Voltage is less than the Lockout Voltage, VLKO. This prevents Bus Write operations from accidentally damaging the data during power up, power down and during power surges. A 100 nF capacitor should be connected between the VCC Supply Voltage pin and the VSS Ground pin, to decouple the current surges from the power supply. The PCB track widths must be sufficient to carry the currents required during program and erase operations. VSS Ground The VSS Ground is the reference for all voltage measurements. DEVICE OPERATION The M39432 memory device is addressed via 19 inputs (A0-A18) and carries data on 8 Data Inputs/ Outputs (DQ0-DQ7). There are four other control inputs: Chip Enable EEPROM (EE), Chip Enable Flash Memory (EF), Output Enable (E) and Write Enable (W). The Chip Enable inputs (EF or EE) are used mainly for power control (turning the chip on and off) and for block selection (selecting the EEPROM block or the Flash memory block). The gating of data to the DQ0-DQ7 pins should be controlled using the Output Enable input (G). The permitted operating modes of the device are listed in Table 3. Read For a Read operation, the Output Enable (G) and one Chip Enable (EF or EE) must be driven low. As noted on the previous page, Read operations are used to read the contents of: – bytes in the Flash memory block – bytes in the EEPROM block – the Manufacturer Identifier – the Flash Sector Protection Status – the Flash Block Identifier – the EEPROM Identifier – the OTP row. The instruction sequences for selecting between these areas is summarized in Table 4. Write Writing data requires: – a Chip Enable (either EE or EF) to be low – the Write Enable (W) to be low and the Output Enable (G) to be high. Addresses in the Flash memory block (or the EEPROM block) are latched on the falling edge of W or EF (or EE) whichever occurs the later. The data to be written to the Flash memory block (or EEPROM block) is latched on the rising edge of W or EF (or EE) whichever occurs first. The Write operation is used in two contexts: – to write data to the EEPROM memory block – to enter the sequence of bytes that makes up one of the instructions shown in Table 4. The programming of a byte of Flash memory involves one of these instructions (as described in the section entitled “Instructions” on this page). Specific Read and Write Operations Device specific information includes the following: – Read the Manufacturer Identifier – Read the Device Identifier – Define the Flash Sector Protection – Read the EEPROM Identifier – Write the EEPROM Identifier Table 3. Operations Note: 1. X = VIH or VIL. Operation EF EE G W DQ0 - DQ7 Read VIL VIH VIL VIH Read from Flash Block VIH VIL Read from EEPROM Block Write VIL VIH VIH VIL Write to Flash Block VIH VIL Write to EEPROM Block Output Disable VIL VIH VIH X Hi-Z VIH VIL Stand-by VIH VIH X X Hi-Z |
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