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M28F201-150XN6TR Datasheet(PDF) 5 Page - STMicroelectronics |
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M28F201-150XN6TR Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 21 page SRAM Interface Levels EPROM Interface Levels Input Rise and Fall Times ≤ 10ns ≤ 10ns Input Pulse Voltages 0 to 3V 0.45V to 2.4V Input and Output Timing Ref. Voltages 1.5V 0.8V and 2V Table 6. AC Measurement Conditions AI01275 3V SRAM Interface 0V 1.5V 2.4V EPROM Interface 0.45V 2.0V 0.8V Figure 3. AC Testing Input Output Waveform AI01276 1.3V OUT CL = 30pF or 100pF CL = 30pF for SRAM Interface CL = 100pF for EPROM Interface CL includes JIG capacitance 3.3k Ω 1N914 DEVICE UNDER TEST Figure 4. AC Testing Load Circuit Symbol Parameter Test Condition Min Max Unit CIN Input Capacitance VIN =0V 6 pF COUT Output Capacitance VOUT =0V 12 pF Note: 1. Sampled only, not 100% tested. Table 7. Capacitance (1) (TA =25 °C, f = 1 MHz ) Read Mode. The Read Mode is the default at power up or may be set-up by writing 00h to the command register. Subsequent read operations output data from the memory. The memory remains in the Read Mode until a new command is written to the command register. Electronic Signature Mode. In order to select the correct erase and programming algorithms for on- board programming, the manufacturer and device codes may be read directly. It is not neccessary to apply a high voltage to A9 when using the com- mand register. The Electronic Signature Mode is set-up by writing 80h or 90h to the command register. The following read cycles, with address inputs 00000h or 00001h, output the manufacturer or device codes. The command is terminated by writing another valid command to the command register (for example Reset). 5/21 M28F201 |
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