M29W640DB90N6F datasheet(1/49 Pages) STMICROELECTRONICS

Part #	M29W640DB90N6F

Description	64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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December 2004

M29W640DT

M29W640DB

64 Mbit (8Mb x8 or 4Mb x16, Boot Block)

3V Supply Flash Memory

FEATURES SUMMARY

■

SUPPLY VOLTAGE

–VCC = 2.7V to 3.6V for Program, Erase,

Read

–VPP =12 V for Fast Program (optional)

■

ACCESS TIME: 90 ns

■

PROGRAMMING TIME

–

10 µs per Byte/Word typical

–

Double Word Programming Option

■

135 MEMORY BLOCKS

–

1 Boot Block and 7 Parameter Blocks,

8 KBytes each (Top or Bottom Location)

–

127 Main Blocks, 64 KBytes each

■

PROGRAM/ERASE CONTROLLER

–

Embedded Byte/Word Program

algorithms

■

ERASE SUSPEND and RESUME MODES

–

Read and Program another Block during

Erase Suspend

■

UNLOCK BYPASS PROGRAM COMMAND

–

Faster Production/Batch Programming

■

VPP/WP Pin for FAST PROGRAM and WRITE

PROTECT

■

TEMPORARY BLOCK UNPROTECTION

MODE

■

COMMON FLASH INTERFACE

–

64-bit Security Code

■

EXTENDED MEMORY BLOCK

–

Extra block used as security block or to

store additional information

■

LOW POWER CONSUMPTION

–

Standby and Automatic Standby

■

100,000 PROGRAM/ERASE CYCLES per

BLOCK

■

ELECTRONIC SIGNATURE

–

Manufacturer Code: 0020h

–

Top Device Code M29W640DT: 22DEh

–

Bottom Device Code M29W640DB:

22DFh

Figure 1. Packages

TSOP48 (N)

12 x 20mm

TFBGA63 (ZA)

63 ball array

FBGA

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