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M39208-15WNB6T Datasheet(PDF) 4 Page - STMicroelectronics |
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M39208-15WNB6T Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 30 page  Operation EF EE G W DQ0 - DQ7 Read VIL VIH VIL VIH Read in Flash Block VIH VIL VIL VIH Read in EEPROM Block Write VIL VIH VIH VIL Write in Flash Block VIH VIL VIH VIL Write in EEPROM Block Output Disable VIL VIH VIH XHi-Z VIH VIL VIH XHi-Z Standby VIH VIH XX Hi-Z Note: X = VIL or VIH. Table 3. Basic Operations Write. A Write operation can be used for two goals: – either write data in the EEPROM memory block – or enter a sequence of bytes composing an instruction. The reader should note that Programming a Flash byte is an instruction (see Instructions paragraph). Writing data requires: – the Chip Enable (either EE or EF) to be Low – the Write Enable (W) to be Low with Output Enable (G) High. Addresses in Flash block (or EEPROM block) are latched on the falling edge of W or EF (EE) which- ever occurs last; the data to be written in Flash block (EEPROM block) is latched on the rising edge of W or EF (EE) whichever occurs first. Specific Read and Write Operations. Device specific data is accessed through operations de- coding the VID level applied on A9 (VID = 12V + 0.5V) and the logic levels applied on address inputs (A0, A1, A6). These specific operations are: – Read the Manufacturer identifier – Read the Device identifier – Define the Flash Sector protection – Read the EEPROM identifier – Write the EEPROM identifier Note: The OTP row (64 bytes) is accessed with a specific software sequence detailed in the para- graph "Write in OTP row". Instructions An instruction is defined as a sequence of specific Write operations. Each received byte is sequen- tially decoded (and not executed as standard Write operations) and the instruction is executed when the correct number of bytes are properly received and the time between two consecutive bytes is shorter than the time-out value. The sequencing of any instruction must be followed exactly, any invalid combination of instruction bytes or time-out between two consecutive bytes will reset the device logic into a Read memory state (when addressing the Flash block) or directly de- coded as a single operation when addressing the EEPROM block. The M39208 set of instructions includes: – Program a byte in the Flash block – Read a Flash sector protection status – Erase instructions: Flash Sector Erase, Flash Block Erase, Flash Sector Erase Suspend, Flash Sector Erase Resume – EEPROM power down – Deep power down – Set/Reset the EEPROM software write protec- tion (SDP) – OTP row access – Reset and Return – Read identifiers: read the manufacturer identi- fier, Read the Flash block identifier These instructions are detailed in Table 4. For efficient decoding of the instruction, the two first bytes of an instruction are the coded cycles and are followed by a command byte or a confirmation byte. The coded cycles consist of writing the data AAh at address 5555h during the first cycle and data 55h at address 2AAAh during the second cycle. In the specific case of the Erase instruction, the instruction expects confirmation by two additional coded cycles. 4/30 M39208 |
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