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Power Thyristor Databook

Silicon Controlled Rectifiers

SxX8xSx EV Series 0.8A Sensitive SCR

SxX8xSx EV Series 0.8A Sensitive SCR

New device series offers high static dv/dt and lower turn

off (t

SCRs junctions are glass-passivated to ensure long term

reliability and parametric stability.

Description

Features

Absolute Maximum Ratings

Symbol

Parameter

Value

Unit

I

T(RMS)

RMS on-state current (full sine wave)

TO-92

T

0.8

A

SOT-89

T

0.8

A

SOT-223

T

0.8

A

I

T(AV)

Average on-state current

TO-92

T

0.51

A

SOT-89

T

0.51

A

SOT-223

T

0.51

A

I

TSM

Non repetitive surge peak on-state current

(Single cycle, T

TO-92

SOT-89

SOT-223

F= 50Hz

8

A

F= 60Hz

10

A

t

F = 50 Hz

0.32

t

F = 60 Hz

0.41

di/dt

Critical rate of rise of on-state current I = 10mA

TO-92

SOT-89

SOT-223

T

50

A/μs

I

t

T

1.0

A

P

Average gate power dissipation

—

T

0.1

W

T

stg

Storage junction temperature range

—

—

-40 to 150

°C

T

J

Operating junction temperature range

—

—

-40 to 125

Main Features

Symbol

Value

Unit

I

T(RMS)

0.8

A

V

400 to 800

V

I

5 to 200

μA

A

K

G

Schematic Symbol

x

applications.

Applications

mount packages

capability > 10Amps

( V

capability - up to 800V

< 25 μsec

microprocessor interface