M28F101-120XN6 datasheet(1/23 Pages) STMICROELECTRONICS

Part #	M28F101-120XN6

Description	1 Mb 128K x 8, Chip Erase FLASH MEMORY

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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M28F101

1 Mb (128K x 8, Chip Erase) FLASH MEMORY

April 1997

1/23

AI00666B

17

A0-A16

W

DQ0-DQ7

VPP

VCC

M28F101

G

E

VSS

8

Figure 1. Logic Diagram

5V

±10% SUPPLY VOLTAGE

12V PROGRAMMING VOLTAGE

FAST ACCESS TIME: 70ns

BYTE PROGRAMING TIME: 10

µs typical

ELECTRICAL CHIP ERASE in 1s RANGE

LOW POWER CONSUMPTION

– Stand-by Current: 100

µA max

10,000 ERASE/PROGRAM CYCLES

INTEGRATED ERASE/PROGRAM-STOP

TIMER

OTP COMPATIBLE PACKAGES and PINOUTS

ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: 07h

DESCRIPTION

The M28F101 FLASH Memory is a non-volatile

memory which may be erased electrically at the

chip level and programmed byte-by-byte. It is or-

ganised as 128K bytes of 8 bits. It uses a command

register architecture to select the operating modes

and thus provides a simple microprocessor inter-

face. The M28F101 FLASH Memory is suitable for

applications where the memory has to be repro-

grammed in the equipment. The access time of

70ns makes the device suitable for use in high

speed microprocessor systems.

A0-A16

Address Inputs

DQ0-DQ7

Data Inputs / Outputs

E

Chip Enable

G

Output Enable

W

Write Enable

VPP

Program Supply

VCC

Supply Voltage

VSS

Ground

Table 1. Signal Names

PLCC32 (K)

32

1

PDIP32 (P)

TSOP32 (N)

8 x 20 mm

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