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M48T248V-85PM1 Datasheet(PDF) 9 Page - STMicroelectronics

Part # M48T248V-85PM1
Description  5.0 or 3.3V, 1024K TIMEKEEPER SRAM with PHANTOM
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M48T248V-85PM1 Datasheet(HTML) 9 Page - STMicroelectronics

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M48T248Y, M48T248V
OPERATION MODES
Table 6. Operating Modes
Note: X = VIH or VIL; VSO = Battery Back-up Switchover Voltage
1. See Table 9, page 14 for details.
READ
A READ cycle executes whenever WRITE Enable
(WE) is high and Chip Enable (CE) is low (see Fig-
ure 6). The distinct address defined by the 19 ad-
dress inputs (A0-A18) specifies which of the 512K
bytes of data is to be accessed. Valid data will be
accessed by the eight data output drivers within
the specified Access Time (tACC) after the last ad-
dress input signal is stable, the CE and OE access
times, and their respective parameters are satis-
fied. When CE tACC and OE tACC are not satisfied,
then data access times must be measured from
the more recent CE and OE signals, with the limit-
ing parameter being tCO (for CE) or tOE (for OE) in-
stead of address access.
WRITE
WRITE Mode (see Figure 7, page 10 and Figure 8,
page 11) occurs whenever CE and WE signals are
low (after address inputs are stable). The most re-
cent falling edge of CE and WE will determine
when the WRITE cycle begins (the earlier, rising
edge of CE or WE determines cycle termination).
All address inputs must be kept stable throughout
the WRITE cycle. WE must be high (inactive) for a
minimum recovery time (tWR) before a subsequent
cycle is initiated. The OE control signal should be
kept high (inactive) during the WRITE cycles to
avoid bus contention. If CE and OE are low (ac-
tive), WE will disable the outputs for Output Data
WRITE Time (tODW) from its falling edge.
Figure 6. Memory READ Cycle
Note: WE is high for a READ cycle.
Mode
VCC
CE
OE
WE
DQ7-DQ0
Power
Deselect
4.5V to 5.5V
or
3.0V to 3.6V
VIH
X
X
High-Z
Standby
WRITE
VIL
X
VIL
DIN
Active
READ
VIL
VIL
VIH
DOUT
Active
READ
VIL
VIH
VIH
High-Z
Active
Deselect
VSO to VPFD (min)
(1)
X
X
X
High-Z
CMOS Standby
Deselect
≤ VSO(1)
X
X
X
High-Z
Battery Back-Up
DQ0 - DQ7
ADDRESSES
OE
CE
DATA OUTPUT
VALID
tOD
tODO
tOE
tRC
tCO
tACC
tCOE
tCOE
tOH
AI04230


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