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M48T559YSH Datasheet(PDF) 5 Page - STMicroelectronics |
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M48T559YSH Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 18 page 5/18 M48T559Y Table 7. Power Down/Up Trip Points DC Characteristics (1) (TA = 0 to 70 °C) Note: 1. All voltages referenced to VSS. 2. At 25°C. Table 8. Power Down/Up AC Characteristics (TA = 0 to 70 °C) Note: 1. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200µs after VCC pass- es VPFD (min). 2. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data. Symbol Parameter Min Typ Max Unit VPFD Power-fail Deselect Voltage 4.2 4.35 4.5 V VSO Battery Back-up Switchover Voltage 3.0 V tDR (2) Expected Data Retention Time 7 YEARS Symbol Parameter Min Max Unit tPD E at VIH before Power Down 0 µs tF (1) VPFD (max) to VPFD (min) VCC Fall Time 300 µs tFB (2) VPFD (min) to VSS VCC Fall Time 10 µs tR VPFD (min) to VPFD (max) VCC Rise Time 10 µs tRB VSS to VPFD (min) VCC Rise Time 1µs tREC VPFD (max) to RST High 40 200 ms Figure 5. Power Down/Up Mode AC Waveforms AI01384D VCC INPUTS RST (PER CONTROL INPUT) OUTPUTS DON'T CARE HIGH-Z tF tFB tR tREC tPD tRB tDR VALID VALID (PER CONTROL INPUT) RECOGNIZED RECOGNIZED VPFD (max) VPFD (min) VSO |
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