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M48T513Y-85CS1 Datasheet(PDF) 5 Page - STMicroelectronics

Part # M48T513Y-85CS1
Description  3.3V-5V 4 Mbit 512Kb x8 TIMEKEEPER SRAM
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M48T513Y-85CS1 Datasheet(HTML) 5 Page - STMicroelectronics

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M48T513Y, M48T513V
Table 3. Operating Modes (1)
Note: 1. X = VIH or VIL; VSO = Battery Back-up Switchover Voltage.
2. See Table 7 for details.
Mode
VCC
E
G
W
DQ0-DQ7
Power
Deselect
4.5V to 5.5V
or
3.0V to 3.6V
VIH
X
X
High Z
Standby
Write
VIL
XVIL
DIN
Active
Read
VIL
VIL
VIH
DOUT
Active
Read
VIL
VIH
VIH
High Z
Active
Deselect
VSO to VPFD (min)
(2)
X
X
X
High Z
CMOS Standby
Deselect
≤ VSO (2)
X
X
X
High Z
Battery Back-up Mode
Table 4. AC Measurement Conditions
Note that Output Hi-Z is defined as the point where data is no longer
driven.
Input Rise and Fall Times
≤ 5ns
Input Pulse Voltages
0 to 3V
Input and Output Timing Ref. Voltages
1.5V
referred to as BiPORT
™ TIMEKEEPER cells).
The external copies are independent of internal
functions except that they are updated periodically
by the simultaneous transfer of the incremented
internal copy. TIMEKEEPER and Alarm Registers
store data in BCD.
DATA RETENTION MODE
With valid VCC applied, the M48T513Y/V operates
as a conventional BYTEWIDE static RAM. Should
the supply voltage decay, the RAM will automati-
cally deselect, write protecting itself when VCC
falls between VPFD (max), VPFD (min) window. All
outputs become high impedance and all inputs are
treated as ”don’t care”.
Note: A power failure during a write cycle may cor-
rupt data at the current addressed location, but
does not jeopardize the rest of the RAM’s content.
At voltages below VPFD (min), the memory will be
in a write protected state, provided the VCC fall
time is not less than tF. The M48T513Y/V may re-
spond to transient noise spikes on VCC that cross
into the deselect window during the time the de-
vice is sampling VCC. Therefore, decoupling of the
power supply lines is recommended.
When VCC drops below VSO, the control circuit
switches power to the internal battery, preserving
data and powering the clock. The internal energy
source will maintain data in the M48T513Y/V for
an accumulated period of at least 10 years at room
temperature. As system power rises above VSO,
the battery is disconnected, and the power supply
is switched to external VCC. Deselect continues for
tREC after VCC reaches VPFD (max). For a further
more detailed review of lifetime calculations,
please see Application Note AN1012.
TIMEKEEPER REGISTERS
The M48T513Y/V offers 16 internal registers
which contain TIMEKEEPER, Alarm, Watchdog,
Interrupt, Flag, and Control data. These registers
are memory locations which contain external (user
accessible) and internal copies of the data (usually
Figure 5. AC Testing Load Circuit
Note: Excluding open drain output pins.
AI01803C
CL = 100pF
CL includes JIG capacitance
650
DEVICE
UNDER
TEST
1.75V


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