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M29W400B-100M1R Datasheet(PDF) 1 Page - STMicroelectronics |
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M29W400B-100M1R Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 34 page AI02065 18 A0-A17 W DQ0-DQ14 VCC M29W400T M29W400B E VSS 15 G RP DQ15A–1 BYTE RB Figure 1. Logic Diagram M29W400T M29W400B 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W400T and M29W400B are replaced respectively by the M29W400BT and M29W400BB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 90ns FAST PROGRAMMING TIME –10 µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte or Word-by-Word – Status Register bits and Ready/Busy Output MEMORY BLOCKS – Boot Block (Top or Bottom location) – Parameter and Main blocks BLOCK, MULTI-BLOCK and CHIP ERASE MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend LOW POWER CONSUMPTION – Stand-by and Automatic Stand-by 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Device Code, M29W400T: 00EEh – Device Code, M29W400B: 00EFh DESCRIPTION The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word- by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against pro- graming and erase on programming equipment, November 1999 1/34 This is information on a product still in productionbut not recommended for new designs. 44 1 SO44 (M) TSOP48 (N) 12 x 20 mm BGA FBGA48 (ZA) 8 x 6 solder balls |
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