SUD50P04-15 datasheet(2/5 Pages) VISHAY

Part #	SUD50P04-15

Description	P-Channel 40-V (D-S), 175C MOSFET

Download	5 Pages

Scroll/Zoom	100%

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

2 / 5 page

SUD50P04-15

Vishay Siliconix

New Product

www.vishay.com

S FaxBack 408-970-5600

2

Document Number: 71176

S-00830—Rev. A, 24-Apr-00

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = –250 mA

–40

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

–1.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = –40 V, VGS = 0 V

–1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = –40 V, VGS = 0 V, TJ = 125_C

–50

mA

On-State Drain Currenta

ID(on)

VDS = –5 V, VGS = –10 V

–120

A

DiS

OS

R

i

a

VGS = –10 V, ID = –30 A

0.012

0.015

W

Drain-Source On-State Resistancea

rDS(on)

VGS = –10 V, ID = –30 A, TJ = 125_C

0.024

W

VGS = –4.5 V, ID = –20 A

0.018

0.023

Forward Transconductancea

gfs

VDS = –15 V, ID = –30 A

20

S

Dynamicb

Input Capacitance

Ciss

5400

F

Output Capacitance

Coss

VGS = 0 V, VDS = –25 V, f = 1 MHz

640

pF

Reverse Transfer Capacitance

Crss

300

Total Gate Chargec

Qg

V20 V V

10 V I

50 A

85

130

C

Gate-Source Chargec

Qgs

VDS = –20 V, VGS = –10 V, ID = –50 A

25

nC

Gate-Drain Chargec

Qgd

15

Turn-On Delay Timec

td(on)

V20 V R

0 4

W

15

25

Rise Timec

tr

VDD = –20 V, RL = 0.4 W

I50 A V

10 V R

2 5

W

380

580

ns

Turn-Off Delay Timec

td(off)

DD

,

L

ID ^ –50 A, VGEN = –10 V, RG = 2.5 W

75

115

ns

Fall Timec

tf

140

210

Source-Drain Diode Ratings and Characteristic (TC = 25_C)

Pulsed Current

ISM

–150

A

Diode Forward Voltagea

VSD

IF = –50 A, VGS = 0 V

–1.2

–1.5

V

Source-Drain Reverse Recovery Time

trr

IF = –50 A, di/dt = 100 A/ms

40

80

ns

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

c.

Independent of operating temperature.

Similar Part No. - SUD50P04-15

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SUD50P04-15	62Kb / 4P	P-Channel 40-V (D-S), 175C MOSFET Rev. A, 24-Apr-00
VBsemi Electronics Co.,...	SUD50P04-15-E3	976Kb / 9P	P-Channel 40 V (D-S) MOSFET
VBsemi Electronics Co.,...	SUD50P04-15L-GE3	977Kb / 9P	P-Channel 40 V (D-S) MOSFET

More results

Similar Description - SUD50P04-15

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SUB65P04-15	57Kb / 5P	P-Channel 40-V (D-S) 175C MOSFET Rev. A, 01-May-00
	SUD50P04-15	62Kb / 4P	P-Channel 40-V (D-S), 175C MOSFET Rev. A, 24-Apr-00
	SUD50P04-09L	44Kb / 4P	P-Channel 40-V (D-S), 175C MOSFET Rev. B, 06-Aug-07
	SUB70N04-10	55Kb / 5P	N-Channel 40-V (D-S), 175C MOSFET Rev. D, 10-Dec-01
	SUM110N04-03L	40Kb / 5P	N-Channel 40-V (D-S) 175C MOSFET Rev. A, 25-Nov-02
	SUB85N04-03	69Kb / 5P	N-Channel 40-V (D-S) 175C MOSFET Rev. B, 27-Mar-00
	SUP85N04-04	58Kb / 5P	N-Channel 40-V (D-S) 175C MOSFET Rev. C, 05-Jul-04
	SUM110N04-2M7H	179Kb / 3P	N-Channel 40-V (D-S) 175C MOSFET 09-Jun-04
	SUD50N04-06H	61Kb / 5P	N-Channel 40-V (D-S), 175C MOSFET Rev. B, 15-Nov-04
	SUD30N04-10	66Kb / 4P	N-Channel 40-V (D-S), 175C MOSFET Rev. D, 18-Aug-03

More results

SUD50P04-15 Datasheet(PDF) 2 Page - Vishay Siliconix

SUD50P04-15 Datasheet(HTML) 2 Page - Vishay Siliconix

Similar Part No. - SUD50P04-15

Similar Description - SUD50P04-15

Html Pages

1 2 3 4 5

Datasheet Download

Link URL