SUD50P04-15 datasheet(4/5 Pages) VISHAY

Part #	SUD50P04-15

Description	P-Channel 40-V (D-S), 175C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SUD50P04-15

Vishay Siliconix

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Document Number: 71176

S-00830—Rev. A, 24-Apr-00

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Junction Temperature

Source-Drain Diode Forward Voltage

TJ – Junction Temperature (_C)

VSD – Source-to-Drain Voltage (V)

0

0.5

1.0

1.5

2.0

2.5

–50

–25

0

25

50

75

100

125

150

175

100

10

1

0.3

0.6

0.9

1.2

1.5

VGS = 10 V

ID = 30 A

TJ = 25_C

TJ = 150_C

0

THERMAL RATINGS

0

10

20

30

40

50

60

0

25

50

75

100

125

150

175

Safe Operating Area

VDS – Drain-to-Source Voltage (V)

500

10

0.1

1

10

100

Limited

by rDS(on)

1

100

TC = 25_C

Single Pulse

Normalized Thermal Transient Impedance, Junction-to-Case

Square Wave Pulse Duration (sec)

2

1

0.1

0.01

10–4

10–3

10–2

10–1

110

Maximum Drain Current vs.

Case Temperature

TC – Case Temperature (_C)

0.2

0.1

0.05

Single Pulse

Duty Cycle = 0.5

1 ms

10 ms

100 ms

dc

10

ms

30

100

ms

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 40_C/W

3. TJM – TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

0.02

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