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TBB1012MMTL-E Datasheet(PDF) 1 Page - Renesas Technology Corp |
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TBB1012MMTL-E Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 14 page Rev.2.00 Aug 22, 2006 page 1 of 13 TBB1012 Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier REJ03G1245-0200 Rev.2.00 Aug 22, 2006 Features • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. • Very useful for total tuner cost reduction. • Suitable for World Standard Tuner RF amplifier. • High gain • Low noise • Low output capacitance • Power supply voltage: 5 V Outline RENESAS Package code: PTSP0006JA-A (Package name: CMPAK-6) 1. Drain(1) 2. Source 3. Drain(2) 4. Gate-1(2) 5. Gate-2 6. Gate-1(1) 3 1 6 4 2 5 Notes: 1. Marking is “MM“. 2. TBB1012 is individual type number of Renesas TWIN BBFET. Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Drain to source voltage VDS 6 V Gate1 to source voltage VG1S +6 –0 V Gate2 to source voltage VG2S +6 –0 V Drain current ID 30 mA Channel power dissipation Pch Note3 250 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 3. Value on the glass epoxy board (50mm × 40mm × 1mm). |
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