M48Z58Y-70MH6TR datasheet(3/17 Pages) STMICROELECTRONICS

Part #	M48Z58Y-70MH6TR

Description	64 Kbit 8Kb x 8 ZEROPOWER SRAM

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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3 / 17 page

AI01030

5V

OUT

CL = 100pF or 5pF

CL includes JIG capacitance

1.9k

Ω

DEVICE

UNDER

TEST

1k

Ω

Figure 4. AC Testing Load Circuit

Input Rise and Fall Times

≤ 5ns

Input Pulse Voltages

0 to 3V

Input and Output Timing Ref. Voltages

1.5V

Note that Output Hi-Z is defined as the point where data is no

longer driven.

Table 4. AC Measurement Conditions

AI01394

LITHIUM

CELL

VPFD

VCC

VSS

VOLTAGE SENSE

AND

SWITCHING

CIRCUITRY

8K x 8

SRAM ARRAY

A0-A12

DQ0-DQ7

E

W

G

POWER

Figure 3. Block Diagram

The M48Z58/58Y is a non-volatile pin and function

equivalent to any JEDEC standard 8K x 8 SRAM.

It also easily fits into many ROM, EPROM, and

EEPROM sockets, providing the non-volatility of

PROMs without any requirement for special write

timing or limitations on the number of writes that

can be performed.

The 28 pin 600mil DIP CAPHAT

™ houses the

M48Z58/58Y silicon with a long life lithium button

cell in a single package.

The 28 pin 330mil SOIC provides sockets with gold

plated contacts at both ends for direct connection

to a separate SNAPHAT housing containing the

battery. The unique design allows the SNAPHAT

battery package to be mounted on top of the SOIC

package after the completion of the surface mount

process. Insertion of the SNAPHAT housing after

reflow prevents potential battery damage due to the

high temperatures required for device surface-

mounting. The SNAPHAT housing is keyed to pre-

vent reverse insertion.

The SOIC and battery packages are shipped sepa-

rately in plastic anti-static tubes or in Tape & Reel

form.

DESCRIPTION (cont’d)

3/17

M48Z58, M48Z58Y

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