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For technical questions, contact: optocoupler.answers@vishay.com

Document Number: 83654

2

Rev. 1.5, 20-Dec-07

ILD621/ILD621GB/ILQ621/ILQ621GB

Vishay Semiconductors

Optocoupler, Phototransistor Output

(Dual, Quad Channel)

Note

For additional information on the available options refer to option information.

Notes

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum

ratings for extended periods of the time can adversely affect reliability.

hole devices (DIP).

ILD621-X007

CTR

> 50 %, dual, SMD-8 (option 7)

ILD621-X009

CTR

> 50 %, dual, SMD-8 (option 9)

ILD621GB-X007

CTR

> 100 %, dual, SMD-8 (option 7)

ILQ621-X006

CTR

> 50 %, quad, DIP-16 400 mil

ILQ621-X007

CTR

> 50 %, quad, SMD-16 (option 7)

ILQ621-X009

CTR

> 50 %, quad, SMD-16 (option 9)

ILQ621GB-X006

CTR

> 100 %, quad, DIP-16 400 mil

ILQ621GB-X007

CTR

> 100 %, quad, SMD-16 (option 7)

ILQ621GB-X009

CTR

> 100 %, quad, SMD-16 (option 9)

ORDER INFORMATION

PART

REMARKS

PARAMETER

TEST CONDITION

PART

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

6.0

V

Forward current

60

mA

Surge current

1.5

A

Power dissipation

100

mW

Derate from 25 °C

1.33

mW/°C

OUTPUT

Collector emitter reverse voltage

70

V

Collector current

50

mA

t < 1.0 ms

100

mA

Power dissipation

150

mW

Derate from 25 °C

- 2.0

mW/°C

COUPLER

Isolation test voltage

t = 1.0 s

5300

Package dissipation

ILD621

400

mW

ILD621GB

400

mW

Derate from 25 °C

5.33

mW/°C

Package dissipation

ILQ621

500

mW

ILQ621GB

500

mW

Derate from 25 °C

6.67

mW/°C

Creepage distance

≥ 7.0

mm

Clearance distance

≥ 7.0

mm

Isolation resistance

Ω

Ω

Storage temperature

- 55 to + 150

°C

Operating temperature

- 55 to + 100

°C

Junction temperature

100

°C

2.0 mm from case bottom

260

°C