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ILD621GB-X007 Datasheet(PDF) 3 Page - Vishay Siliconix |
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ILD621GB-X007 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Document Number: 83654 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.5, 20-Dec-07 3 ILD621/ILD621GB/ILQ621/ILQ621GB Optocoupler, Phototransistor Output (Dual, Quad Channel) Vishay Semiconductors Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 10 mA VF 1.01.151.3 V Reverse current VR = 6.0 V IR 0.01 10 µA Capacitance VR = 0 V, f = 1.0 MHz CO 40 pF Thermal resistance, junction to lead RTHJL 750 K/W OUTPUT Collector emitter capacitance VCE = 5.0 V, f = 1.0 MHz CCE 6.8 pF Collector emitter leakage current VCE = 24 V ICEO 10 100 nA ICEO 20 50 µA Thermal resistance, junction to lead RTHJL 500 K/W COUPLER Capacitance (input to output) VIO = 0 V, f = 1.0 MHz CIO 0.8 pF Insulation resistance VIO = 500 V 1012 Ω Channel to channel insulation 500 VAC Collector emitter saturation voltage IF = 8.0 mA, ICE = 2.4 mA ILD621 VCEsat 0.4 V ILQ621 IF = 1.0 mA, ICE = 0.2 mA ILD621GB VCEsat 0.4 V ILQ621GB CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Channel/channel CTR match IF = 5.0 mA, VCE = 5.0 V CTRX/ CTRY 1 to 1 3 to 1 % Current transfer ratio (collector emitter saturated) IF = 1.0 mA, VCE = 0.4 V ILD621 CTRCEsat 60 % ILQ621 CTRCEsat 60 % ILD621GB CTRCEsat 30 % ILQ621GB CTRCEsat 30 % Current transfer ratio (collector emitter) IF = 5.0 mA, VCE = 5.0 V ILD621 CTRCE 50 80 600 % ILQ621 CTRCE 50 80 600 % ILD621GB CTRCE 100 200 600 % ILQ621GB CTRCE 100 200 600 % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT NON-SATURATED On time IF = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP ton 3.0 µs Rise time IF = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tr 2.0 µs Off time IF = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP toff 2.3 µs Fall time IF = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tf 2.0 µs Propagation H to L IF = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tPHL 1.1 µs Propagation L to H IF = ± 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tPLH 2.5 µs |
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