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DIM300XCM45-F000 Datasheet(PDF) 5 Page - Dynex Semiconductor |
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DIM300XCM45-F000 Datasheet(HTML) 5 Page - Dynex Semiconductor |
5 / 8 page DIM300XCM45-F000 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 5/7 www.dynexsemi.com 0 50 100 150 200 250 300 350 400 450 500 0.0 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce (V) Vg=10V Vg=12V Vg=15V Vg=20V Tcase = 25°C 0 100 200 300 400 500 600 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Collector-emitter voltage, Vce (V) Vge=10V Vge=12V Vge=15V Vge=20V Tcase =125°C Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics 0 200 400 600 800 1000 1200 1400 1600 0 50 100 150 200 250 300 Collector current, Ic (A) Eon (mJ) Eoff (mJ) Erec (mJ) Conditions Vcc = 2250V Tc = 125°C Cge = 55nF Vge = +/- 15V Rg(on) = 10 Rg(off) = 22 0 500 1000 1500 2000 2500 3000 3500 4000 0 10 20 30 40 50 60 Gate resistance, Rg (Ohms) Eon (mJ) Eoff (mJ) Erec (mJ) Conditions: Vcc = 2250V Tc = 125°C Cge = 55nF Vge = +/- 15V Ic = 300A Fig.5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance |
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Similar Description - DIM300XCM45-F000 |
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