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IRFSL41N15DPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRFSL41N15DPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 13 page  www.irf.com 1 08/10/06 HEXFET® Power MOSFET Notes through are on page 12 PD - 94927A l High frequency DC-DC converters l Lead-Free Benefits Applications l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF VDSS RDS(on) max ID 150V 0.045 : 41A Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation, D 2Pak W PD @TC = 25°C Power Dissipation, TO-220 PD @TC = 25°C Power Dissipation, Fullpak Linear Derating Factor, TO-220 W/°C Linear Derating Factor, Fullpak VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery dv/dt e V/ns TJ Operating Junction and TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw N•m (lbf•in) Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 °C/W RθJC Junction-to-Case, Fullpak ––– 3.14 Rθcs Case-to-Sink, Flat, Greased Surface h 0.50 ––– RθJA Junction-to-Ambient, TO-220 h ––– 62 RθJA Junction-to-Ambient, D 2Pak i ––– 40 RθJA Junction-to-Ambient, Fullpak ––– 65 3.1 48 0.32 200 1.3 ± 30 2.7 Max. 41 29 164 -55 to + 175 300 (1.6mm from case ) 1.1(10) D2Pak IRFS41N15D TO-220AB IRFB41N15D TO-262 IRFSL41N15D TO-220 FullPak IRFIB41N15D |
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