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M29F040-90N3R Datasheet(PDF) 3 Page - STMicroelectronics |
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M29F040-90N3R Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 31 page Symbol Parameter Value Unit TA Ambient Operating Temperature (3) –40 to 125 °C TBIAS Temperature Under Bias –50 to 125 °C TSTG Storage Temperature –65 to 150 °C VIO (2) Input or Output Voltages –0.6 to 7 V VCC Supply Voltage –0.6 to 7 V VA9 (2) A9 Voltage –0.6 to 13.5 V Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. 2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns. 3. Depends on range. Table 2. Absolute Maximum Ratings (1) tected against program and erase. Block erasure may be suspended, while data is read from other blocks of the memory, and then resumed. Bus Operations Seven operations can be performed by the appro- priate bus cycles, Read Array, Read Electronic Signature, Output Disable, Standby, Protect Block, Unprotect Block, and Write the Command of an Instruction. Command Interface Command Bytes can be written to a Command Interface (C.I.) latch to perform Reading (from the Array or Electronic Signature), Erasure or Pro- gramming. For added data protection, command execution starts after 4 or 6 command cycles. The first, second, fourth and fifth cycles are used to input a code sequence to the Command Interface (C.I.). This sequence is equal for all P/E.C. instruc- tions. Command itself and its confirmation - if it applies - are given on the third and fourth or sixth cycles. Instructions Seven instructions are defined to perform Reset, Read Electronic Signature, Auto Program, Block Auto Erase, Chip Auto Erase, Block Erase Suspend and Block Erase Resume. The internal Pro- gram/Erase Controller (P/E.C.) handles all timing and verification of the Program and Erase instruc- tions and provides Data Polling, Toggle, and Status data to indicate completion of Program and Erase Operations. Instructions are composed of up to six cycles. The first two cycles input a code sequence to the Com- mand Interface which is common to all P/E.C. instructions (see Table 7 for Command Descrip- tions). The third cycle inputs the instruction set up command instruction to the Command Interface. Subsequent cycles output Signature, Block Protec- tion or the addressed data for Read operations. For added data protection, the instructions for pro- gram, and block or chip erase require further com- mand inputs. For a Program instruction, the fourth command cycle inputs the address and data to be programmed. For an Erase instruction (block or chip), the fourth and fifth cycles input a further code sequence before the Erase confirm command on the sixth cycle. Byte programming takes typically 10 µs while erase is performed in typically 1.0 sec- ond. Erasure of a memory block may be suspended, in order to read data from another block, and then resumed. Data Polling, Toggle and Error data may be read at any time, including during the program- ming or erase cycles, to monitor the progress of the operation. When power is first applied or if VCC falls below VLKO, the command interface is reset to Read Array. 3/31 M29F040 |
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