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MT16VDDF6464HG-265 Datasheet(PDF) 9 Page - Micron Technology

Part # MT16VDDF6464HG-265
Description  SMALL-OUTLINE DDR SDRAM DIMM
Download  31 Pages
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Manufacturer  MICRON [Micron Technology]
Direct Link  http://www.micron.com
Logo MICRON - Micron Technology

MT16VDDF6464HG-265 Datasheet(HTML) 9 Page - Micron Technology

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512MB, 1GB (x64)
200-PIN DDR SODIMM
09005aef80a646bc
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DDF16C64_128x64HG_B.fm - Rev. B 7/03 EN
9
©2003 Micron Technology, Inc.
Burst Length
Read and write accesses to the DDR SDRAM are
burst oriented, with the burst length being program-
mable, as shown in Figure 5, Mode Register Definition
Diagram. The burst length determines the maximum
number of column locations that can be accessed for a
given READ or WRITE command. Burst lengths of 2, 4,
or 8 locations are available for both the sequential and
the interleaved burst types.
Reserved states should not be used, as unknown
operation or incompatibility with future versions may
result.
When a READ or WRITE command is issued, a block
of columns equal to the burst length is effectively
selected. All accesses for that burst take place within
this block, meaning that the burst will wrap within the
block if a boundary is reached. The block is uniquely
selected by A1–Ai when the burst length is set to two,
by A2–Ai when the burst length is set to four and by
A3–Ai when the burst length is set to eight (where Ai is
the most significant column address bit for a given
configuration. See Note 5 of Table 6, Burst Definition
Table, on page 10, for Ai values). The remaining (least
significant) address bit(s) is (are) used to select the
starting location within the block. The programmed
burst length applies to both read and write bursts.
Burst Type
Accesses within a given burst may be programmed
to be either sequential or interleaved; this is referred to
as the burst type and is selected via bit M3.
The ordering of accesses within a burst is deter-
mined by the burst length, the burst type and the start-
ing column address, as shown in Table 6, Burst
Definition Table, on page 10.
Read Latency
The READ latency is the delay, in clock cycles,
between the registration of a READ command and the
availability of the first bit of output data. The latency
can be set to 2 or 2.5 clocks, as shown in Figure 6, CAS
Latency Diagram, on page 10.
If a READ command is registered at clock edge n,
and the latency is m clocks, the data will be available
nominally coincident with clock edge n + m. The CAS
Latency Table indicates the operating frequencies at
which each CAS latency setting can be used.
Reserved states should not be used as unknown
operation or incompatibility with future versions may
result.
Figure 5: Mode Register Definition
Diagram
Burst Length
CAS Latency BT
0*
A9
A7 A6 A5 A4 A3
A8
A2 A1 A0
Mode Register (Mx)
Address Bus
9
7
65
4
3
8
2
1
0
Operating Mode
A10
A12 A11
BA1 BA0
10
11
12
13
0*
14
* M14 and M13 (BA1 and BA0)
must be “0, 0” to select the
base mode register (vs. the
extended mode register).
M3 = 0
Reserved
2
4
8
Reserved
Reserved
Reserved
Reserved
Operating Mode
Normal Operation
Normal Operation/Reset DLL
All other states reserved
0
1
-
0
0
-
0
0
-
0
0
-
0
0
-
0
0
-
Valid
Valid
-
0
1
Burst Type
Sequential
Interleaved
CAS Latency
Reserved
Reserved
2
Reserved
Reserved
Reserved
2.5
Reserved
Burst Length
M0
0
1
0
1
0
1
0
1
M1
0
0
1
1
0
0
1
1
M2
0
0
0
0
1
1
1
1
M3
M4
0
1
0
1
0
1
0
1
M5
0
0
1
1
0
0
1
1
M6
0
0
0
0
1
1
1
1
M6-M0
M8 M7
M9
M10
M12 M11
0
0
-
M13


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