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SI6544BDQ Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI6544BDQ Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com 4 Document Number: 72244 S-81056-Rev. B, 12-May-08 Vishay Siliconix Si6544BDQ N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.3 0.6 0.9 1.2 1.5 TJ = 25 °C 20 10 0.1 VSD - Source-to-Drain Voltage (V) TJ = 150 °C 1 - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.03 0.06 0.09 0.12 0.15 0 2468 10 I D = 4.3 A V GS - Gate-to-Source Voltage (V) 0 120 200 40 80 Time (s) 160 110 10-1 10-3 10-2 Safe Operating Area, Junction-to-Case 100 1 0.1 1 10 100 0.01 10 100 ms 0.1 Limited by R * DS(on) TC = 25 °C Single Pulse 1 s 10 s DC 10 ms 1 ms VDS - Drain-to-Source Voltage (V) *VGS > minimum VGS at which RDS(on) is specified |
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Similar Description - SI6544BDQ_08 |
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