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SUR30100PT Datasheet(PDF) 1 Page - Sirectifier Semiconductors |
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SUR30100PT Datasheet(HTML) 1 Page - Sirectifier Semiconductors |
1 / 3 page SUR3080PT thru SUR30120PT Ultra Fast Recovery Epitaxial Diodes SUR3080PT VRSM V 800 VRRM V 800 Symbol Test Conditions Maximum Ratings Unit IFRMS IFAVM IFRM TVJ=TVJM TC=100 oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM 25 15 150 A TVJ=45 oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine TVJ=150 oC t=10ms(50Hz), sine t=8.3ms(60Hz), sine 75 80 65 70 A IFSM TVJ=45 oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine TVJ=150 oC t=10ms(50Hz), sine t=8.3ms(60Hz), sine 28 27 21 20 A 2s I 2t TVJ TVJM Tstg -40...+150 150 -40...+150 oC Ptot TC=25 oC Md Mounting torque 78 0.4...0.6 2 W Nm Weight g SUR30100PT 1000 1000 A=Anode, C=Cathode, TAB=Cathode A A C C(TAB) A C A Dimensions TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 1.5 2.49 0.087 0.102 SUR30120PT 1200 1200 |
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