HUR1060

High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

200

600

1000

0

400

800

70

80

90

100

110

120

0.00001

0.0001

0.001

0.01

0.1

1

0.001

0.01

0.1

1

10

0

40

80

120

160

0.0

0.5

1.0

1.5

2.0

K

f

T

VJ

°C

-di

t

s

K/W

0

200

400

600

800

1000

0

5

10

15

20

0.0

0.3

0.6

0.9

1.2

V

FR

di

V

200

600

1000

0

400

800

0

10

20

30

40

100

1000

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.0

0.5

1.0

1.5

2.0

2.5

0

5

10

15

20

25

30

I

RM

Q

r

I

F

A

V

F

-di

-di

A/us

A

V

nC

A/us

A/us

t

rr

ns

t

fr

Z

thJC

A/us

us

I

I

I

5A

T

V

T

I

F

= 10A

Fig. 3 Peak reverse current I

RM

versus -di

Fig. 2 Reverse recovery charge Q

r

versus -di

Fig. 1 Forward current I

T

V

T

V

I

I

I

5A

Q

r

I

RM

Fig. 4 Dynamic parameters Q

versus T

VJ

Fig. 5 Recovery time t

Fig. 6 Peak forward voltage V

versus di

I

I

I

5A

t

fr

V

FR

Fig. 7 Transient thermal resistance junction to case

Constants for Z

i

R

t

1

1.449

0.0052

2

0.5578

0.0003

3

0.4931

0.0169

T

T

T

25°C