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SID300S12 Datasheet(PDF) 1 Page - Sirectifier Semiconductors |
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SID300S12 Datasheet(HTML) 1 Page - Sirectifier Semiconductors |
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1 / 2 page  SPT IGBT Modules Symbol Conditions Units IGBT Inverse Diode TC = 25 oC, unless otherwise specified VCES V IC TC= 25(80) oC A ICRM A VGES TVj,(Tstg) Visol TC= 25(80) oC, tP =1ms AC, 1min IF = -IC IFRM IFSM TC= 25(80) oC TC= 25(80) oC, tP =1ms tP =10ms; sin.;Tj=150 oC 1200 370(265) 740(530) +20 40...+150(125) 4000 690(500) 1800 V oC V A A A TOPERATION < _ Tstg Freewheeling diode IF = -IC IFRM IFSM _ _ TC= 25(80) oC TC= 25(80) oC, tP =1ms tP =10ms; sin.;Tj=150 oC 260(180) 260(180) 690(500) 1800 A A A SID300S12 Dimensions in mm (1mm = 0.0394") Absolute Maximum Ratings Values |
Similar Part No. - SID300S12 |
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Similar Description - SID300S12 |
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