SUR2x100-06

Ultra Fast Recovery Epitaxial Diodes

200

600

1000

0

400

800

120

140

160

180

200

220

240

260

0.001

0.01

0.1

1

10

0.1

1

0

50

100

150

0.4

0.6

0.8

1.0

1.2

1.4

K

f

T

VJ

°C

-di

t

s

K/W

0

200

400

600

800

1000

10

30

50

0

20

40

60

0.0

0.5

1.0

1.5

2.0

2.5

3.0

V

FR

di

V

200

600

1000

0

400

800

10

30

50

70

0

20

40

60

80

100

1000

0

1

2

3

4

5

6

7

0.0

0.5

1.0

1.5

0

25

50

75

100

125

150

I

RM

Q

r

I

F

A

V

F

-di

-di

A/us

A

V

C

A/us

A/us

t

rr

ns

t

fr

Z

thJC

A/us

us

Single Pulse

0.05

0.1

0.2

0.3

0.5

D=0.7

0.05

I

I

I

50A

T

V

T

I

F

= 100A

Fig. 3 Peak reverse current I

RM

versus -di

Fig. 2 Reverse recovery charge Q

r

versus -di

Fig. 1 Forward current I

T

T

T

T

V

T

V

I

I

I

50A

Q

r

I

RM

Fig. 4 Dynamic parameters Q

versus T

VJ

Fig. 5 Recovery time t

Fig. 6 Peak forward voltage V

versus di

I

I

I

50A

t

fr

V

FR

Fig. 7 Transient thermal impedance junction to case at various duty cycles

Constants for Z

i

R

t

1

0.02

0.00002

2

0.05

0.00081

3

0.076

0.01

4

0.24

0.94

5

0.114

0.45