SII50N12 datasheet(3/7 Pages) SIRECTIFIER

Part #	SII50N12

Description	NPT IGBT Modules

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Manufacturer	SIRECTIFIER [Sirectifier Semiconductors]

Direct Link	http://www.sirectifier.com

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3 / 7 page

NPT IGBT Modules

SirectifierR

SII50N12

Power dissipation

Ptot = ƒ(TC)

parameter: Tj ≤ 150 °C

0

20

40

60

80

100

120

°C

160

T

C

0

50

100

150

200

250

300

350

W

450

P

tot

Safe operating area

IC = ƒ(VCE)

parameter: D = 0, TC = 25°C , Tj ≤ 150 °C

-1

10

0

10

1

10

2

10

3

10

A

I

C

10

0

10

1

10

2

10

3

V

CE

DC

10 ms

1 ms

100 µs

t

p = 14.0µs

Collector current

I

C = ƒ(TC)

parameter: V

GE ≥ 15 V , Tj ≤ 150 °C

0

20

40

60

80

100

120

°C

160

T

C

0

10

20

30

40

50

60

70

A

90

I

C

Transient thermal impedance

IGBT

Z

th JC = ƒ(tp)

parameter: D = t

p / T

-4

10

-3

10

-2

10

-1

10

0

10

K/W

Z

thJC

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

s

t

p

single pulse

0.01

0.02

0.05

0.10

0.20

D = 0.50

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