SII50N12 datasheet(5/7 Pages) SIRECTIFIER

Part #	SII50N12

Description	NPT IGBT Modules

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Manufacturer	SIRECTIFIER [Sirectifier Semiconductors]

Direct Link	http://www.sirectifier.com

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NPT IGBT Modules

SirectifierR

SII50N12

Typ. gate charge

VGE = ƒ(QGate)

parameter: IC puls = 50 A

0

40

80

120

160

200

240

280 nC 340

Q

Gate

0

2

4

6

8

10

12

14

16

V

20

V

GE

800 V

600 V

T yp. c apac itanc es

C = f (VCE )

parameter: VGE = 0, f = 1 MHz

0

5

10

15

20

25

30

V

40

V

C E

-1

10

0

10

1

10

2

10

nF

C

C iss

C oss

C rs s

R evers e bias ed s afe operating area

ICpuls = f(VCE ) , Tj = 150°C

parameter: VGE = 15 V

0

200

400

600

800

1000 1200

V

1600

V

C E

0.0

0.5

1.0

1.5

2.5

I

C puls/IC

S hort c irc uit s afe operating area

ICsc = f(VCE ) , Tj = 150°C

parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH

0

200

400

600

800

1000 1200

V

1600

V

C E

0

2

4

6

8

12

I

C sc/IC

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SII50N12 Datasheet(PDF) 5 Page - Sirectifier Semiconductors

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