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M58LW032D90N6T Datasheet(PDF) 1 Page - STMicroelectronics |
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M58LW032D90N6T Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 51 page 1/51 September 2003 M58LW032D 32 Mbit (4Mb x8, 2Mb x16, Uniform Block) 3V Supply Flash Memory FEATURES SUMMARY s WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH s SUPPLY VOLTAGE –VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations s ACCESS TIME – Random Read 90ns,110ns – Page Mode Read 90ns/25ns, 110ns/25ns s PROGRAMMING TIME – 16 Word Write Buffer –12 µs Word effective programming time s 32 UNIFORM 64 KWord/128KByte MEMORY BLOCKS s ENHANCED SECURITY – Block Protection/ Unprotection –VPEN signal for Program Erase Enable – 128 bit Protection Register with 64 bit Unique Code in OTP area s PROGRAM and ERASE SUSPEND s 128 bit PROTECTION REGISTER s COMMON FLASH INTERFACE s 100, 000 PROGRAM/ERASE CYCLES per BLOCK s ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Device Code M58LW032D: 0016h Figure 1. Packages TSOP56 (N) 14 x 20 mm TBGA64 (ZA) 10 x 13 mm TBGA |
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