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LP3965ES-ADJEP Datasheet(PDF) 11 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # LP3965ES-ADJEP
Description  1.5A Fast Ultra Low Dropout Linear Regulators
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LP3965ES-ADJEP Datasheet(HTML) 11 Page - National Semiconductor (TI)

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Applications Information (Continued)
Tantalums also have good temperature stability: a good
quality Tantalum will typically show a capacitance value that
varies less than 10-15% across the full temperature range of
125˚C to −40˚C. ESR will vary only about 2X going from the
high to low temperature limits.
The increasing ESR at lower temperatures can cause oscil-
lations when marginal quality capacitors are used (if the ESR
of the capacitor is near the upper limit of the stability range at
room temperature).
ALUMINUM: This capacitor type offers the most capaci-
tance for the money. The disadvantages are that they are
larger in physical size, not widely available in surface mount,
and have poor AC performance (especially at higher fre-
quencies) due to higher ESR and ESL.
Compared by size, the ESR of an aluminum electrolytic is
higher than either Tantalum or ceramic, and it also varies
greatly with temperature. A typical aluminum electrolytic can
exhibit an ESR increase of as much as 50X when going from
25˚C down to −40˚C.
It should also be noted that many aluminum electrolytics only
specify impedance at a frequency of 120 Hz, which indicates
they have poor high frequency performance. Only aluminum
electrolytics that have an impedance specified at a higher
frequency (between 20 kHz and 100 kHz) should be used for
the LP396XEP. Derating must be applied to the manufactur-
er’s ESR specification, since it is typically only valid at room
temperature.
Any applications using aluminum electrolytics should be
thoroughly tested at the lowest ambient operating tempera-
ture where ESR is maximum.
PCB LAYOUT
Good PC layout practices must be used or instability can be
induced because of ground loops and voltage drops. The
input and output capacitors must be directly connected to the
input, output, and ground pins of the LP3962EP/5EP using
traces which do not have other currents flowing in them
Kelvin connect).
The best way to do this is to lay out C
IN and COUT near the
device with short traces to the V
IN,VOUT, and ground pins.
The regulator ground pin should be connected to the exter-
nal circuit ground so that the regulator and its capacitors
have a "single point ground".
It should be noted that stability problems have been seen in
applications where "vias" to an internal ground plane were
used at the ground points of the LP3962EP/5EP IC and the
input and output capacitors. This was caused by varying
ground potentials at these nodes resulting from current flow-
ing through the ground plane. Using a single point ground
technique for the regulator and it’s capacitors fixed the prob-
lem.
Since high current flows through the traces going into V
IN
and coming from V
OUT, Kelvin connect the capacitor leads to
these pins so there is no voltage drop in series with the input
and output capacitors.
RFI/EMI SUSCEPTIBILITY
RFI (radio frequency interference) and EMI (electromagnetic
interference) can degrade any integrated circuit’s perfor-
mance because of the small dimensions of the geometries
inside the device. In applications where circuit sources are
present which generate signals with significant high fre-
quency energy content (> 1 MHz), care must be taken to
ensure that this does not affect the IC regulator.
If RFI/EMI noise is present on the input side of the
LP396XEP regulator (such as applications where the input
source comes from the output of a switching regulator), good
ceramic bypass capacitors must be used at the input pin of
the LP396XEP.
If a load is connected to the LP396XEP output which
switches at high speed (such as a clock), the high-frequency
current pulses required by the load must be supplied by the
capacitors on the LP396XEP output. Since the bandwidth of
the regulator loop is less than 100 kHz, the control circuitry
cannot respond to load changes above that frequency. The
means the effective output impedance of the LP396XEP at
frequencies above 100 kHz is determined only by the output
capacitor(s).
In applications where the load is switching at high speed, the
output of the LP396XEP may need RF isolation from the
load. It is recommended that some inductance be placed
between the LP396XEP output capacitor and the load, and
good RF bypass capacitors be placed directly across the
load.
PCB layout is also critical in high noise environments, since
RFI/EMI is easily radiated directly into PC traces. Noisy
circuitry should be isolated from "clean" circuits where pos-
sible, and grounded through a separate path. At MHz fre-
quencies, ground planes begin to look inductive and RFI/
EMI can cause ground bounce across the ground plane.
In multi-layer PCB applications, care should be taken in
layout so that noisy power and ground planes do not radiate
directly into adjacent layers which carry analog power and
ground.
OUTPUT ADJUSTMENT
An adjustable output device has output voltage range of
1.215V to 5.1V. To obtain a desired output voltage, the
following equation can be used with R1 always a 10k
resistor.
For output stability, C
F must be between 68pF and 100pF.
OUTPUT NOISE
Noise is specified in two ways-
Spot Noise or Output noise density is the RMS sum of all
noise sources, measured at the regulator output, at a spe-
cific frequency (measured with a 1Hz bandwidth). This type
of noise is usually plotted on a curve as a function of fre-
quency.
Total output Noise or Broad-band noise is the RMS sum
of spot noise over a specified bandwidth, usually several
decades of frequencies.
Attention should be paid to the units of measurement. Spot
noise is measured in units µV/
Hz or nV/Hz and total output
noise is measured in µV(rms).
The primary source of noise in low-dropout regulators is the
internal reference. In CMOS regulators, noise has a low
frequency component and a high frequency component,
which depend strongly on the silicon area and quiescent
current. Noise can be reduced in two ways: by increasing the
transistor area or by increasing the current drawn by the
www.national.com
11


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