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S1PDB60N10 Datasheet(PDF) 2 Page - Sirectifier Semiconductors |
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S1PDB60N10 Datasheet(HTML) 2 Page - Sirectifier Semiconductors |
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2 / 2 page  S1PDB60 FEATURES * Package with screw terminals * Isolation voltage 3000 V~ * Planar passivated chips * Blocking voltage up to 1800 V * Low forward voltage drop ADVANTAGES * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling APPLICATIONS * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Symbol Test Conditions Characteristic Values Unit VR=VRRM; TVJ=25 oC VR=VRRM; TVJ=TVJM < 0.3 < 5 mA VF IF=150A; TVJ=25 oC < 1.8 V IR VTO For power-loss calculations only 0.8 V rT TVJ=TVJM 8 m per diode per module RthJC 1.45 0.24 K/W per diode per module RthJK 1.87 0.31 K/W dS Creeping distance on surface 10 mm dA Creepage distance in air 9.4 mm a Max. allowable acceleration 50 m/s 2 _ _ _ Single Phase Bridge Rectifiers Modules |
Similar Part No. - S1PDB60N10 |
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Similar Description - S1PDB60N10 |
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