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S1PHB36-16 Datasheet(PDF) 2 Page - Sirectifier Semiconductors |
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S1PHB36-16 Datasheet(HTML) 2 Page - Sirectifier Semiconductors |
2 / 3 page S1PHB36 Symbol Test Conditions Characteristic Values Unit V VT, VF IT, IF=45A; TVJ=25 oC 1.45 VTO For power-loss calculations only (TVJ=125 oC) 0.85 V rT 13 m VD=6V; TVJ=25 oC TVJ=-40 oC VGT 1.0 1.2 V VD=6V; TVJ=25 oC TVJ=-40 oC TVJ=125 oC IGT 65 80 50 mA VGD TVJ=TVJM; VD=2/3VDRM 0.2 V IGD 5 mA IH TVJ=25 oC; VD=6V; RGK= 100 mA tG=30us; IG=0.3A; TVJ=25 oC diG/dt=0.3A/us TVJ=-40 oC TVJ=125 oC 150 200 100 mA IL per thyristor(diode); DC current per module RthJC 1.15 0.29 K/W per thyristor(diode); DC current per module RthJK 1.55 0.39 K/W dS Creeping distance on surface 12.6 mm dA Creepage distance in air 6.3 mm a Maximum allowable acceleration 50 m/s 2 IR, ID TVJ=TVJM; VR=VRRM; VD=VDRM TVJ=25 oC 5 0.3 mA TVJ=25 oC; VD=1/2VDRM IG=0.3A; diG/dt=0.3A/us tgd 2 us TVJ=125 oC; IT=15A; tp=300us; VR=100V typ. tq 150 us uC Qr VD=2/3VDRM; dv/dt=20V/us; di/dt=-10A/us 75 TVJ=TVJM; VD=2/3VDRM A F ig. 1 G ate trigger range F ig. 2 G ate controlled delay time t gd 1 10 100 1000 0.1 1 10 I G V G mA 1: I G T, T VJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C V 4: P GAV = 0.5 W 5: P GM = 1 W 6: P GM = 10 W I G D, T VJ = 125°C 4 2 1 5 6 10 100 1000 1 10 100 1000 s t gd T VJ = 25° C typ. Limit mA I G 3 Single Phase Half Controlled Bridge With Free Wheeling Diode |
Similar Part No. - S1PHB36-16 |
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Similar Description - S1PHB36-16 |
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