M59MR032C120GC6T datasheet(8/49 Pages) STMICROELECTRONICS

Part #	M59MR032C120GC6T

Description	32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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M59MR032C, M59MR032D

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SIGNAL DESCRIPTIONS

See Figure 1 and Table 1.

Address Inputs or Data Input/Output (ADQ0-

ADQ15). When Chip Enable E is at VIL and Out-

put Enable G is at VIH the multiplexed address/

data bus is used to input addresses for the memo-

ry array, data to be programmed in the memory ar-

ray or commands to be written to the C.I. The

address inputs for the memory array are latched

on the rising edge of Latch Enable L. The address

latch is transparent when L is at VIL. Both input

data and commands are latched on the rising edge

of Write Enable W. When Chip Enable E and Out-

put Enable G are at VIL the address/data bus out-

puts data from the Memory Array, the Electronic

Signature Manufacturer or Device codes, the

Block Protection status the Configuration Register

status or the Status Register Data Polling bit

ADQ7, the Toggle Bits ADQ6 and ADQ2, the Error

bit ADQ5. The address/data bus is high imped-

ance when the chip is deselected, Output Enable

G is at VIH, or RP is at VIL.

Address Inputs (A16-A20). The five MSB ad-

dresses of the memory array are latched on the

rising edge of Latch Enable L.

Chip Enable (E). The Chip Enable input acti-

vates the memory control logic, input buffers, de-

coders and sense amplifiers. E at VIH deselects

the memory and reduces the power consumption

to the standby level. E can also be used to control

writing to the command register and to the memo-

ry array, while W remains at VIL.

Output Enable (G). The Output Enable gates the

outputs through the data buffers during a read op-

eration. When G is at VIH the outputs are High im-

pedance.

Write Enable (W). This input controls writing to

the Command Register and Data latches. Data are

latched on the rising edge of W.

Write Protect (WP). This input gives an addition-

al hardware protection level against program or

erase when pulled at VIL, as described in the Block

Lock instruction description.

Reset/Power-down Input (RP). The

RP

input

provides hardware reset of the memory, and/or

Power-down functions, depending on the Configu-

ration Register status. Reset/Power-down of the

memory is achieved by pulling RP to VIL for at

least tPLPH. When the reset pulse is given, if the

memory is in Read, Erase Suspend Read or

Standby, it will output new valid data in tPHQ7V1 af-

ter the rising edge of RP. If the memory is in Erase

or Program modes, the operation will be aborted

and the reset recovery will take a maximum of

tPLQ7V. The memory will recover from Power-

down (when enabled) in tPHQ7V2 after the rising

edge of RP. Exit from Reset/Power-down changes

the contents of the configuration register bits 14

and 15, setting the memory in asynchronous page

mode read and power save function disabled. All

blocks are protected and unlocked after a Reset/

Power-down. See Tables 29, 31 and Figure 14.

Latch Enable (L). L latches the address bits

ADQ0-ADQ15 and A16-A20 on its rising edge.

The address latch is transparent when L is at VIL

and it is inhibited when L is at VIH.

Clock (K). The clock input synchronizes the

memory to the microcontroller during burst mode

read operation; the address is latched on a K edge

(rising or falling, according to the configuration set-

tings) when L is at VIL. K is don’t care during asyn-

chronous page mode read and in write operations.

Wait (WAIT). WAIT is an output signal used dur-

ing burst mode read, indicating whether the data

on the output bus are valid or a wait state must be

inserted. This output is high impedance when E or

G are high or RP is at VIL, and can be configured

to be active during the wait cycle or one clock cy-

cle in advance.

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