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SBL4060PT Datasheet(PDF) 1 Page - Sirectifier Semiconductors |
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SBL4060PT Datasheet(HTML) 1 Page - Sirectifier Semiconductors |
1 / 2 page SBL4050PT thru SBL4060PT FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications MECHANICAL DATA * Case: TO-247AD molded plastic * Polarity: As marked on the body * Weight: 0.2 ounces, 5.6 grams * Mounting position: Any Low VF Schottky Barrier Rectifiers A=Anode, C=Cathode, TAB=Cathode A A C C(TAB) A C A Dimensions TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 1.5 2.49 0.087 0.102 SBL4050PT SBL4060PT VRRM V 50 60 VRMS V 35 42 VDC V 50 60 Symbol Characteristics I(AV) Maximum Average Forward Rectified Current @TC=100 C IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Maximum Forward Voltage At 20A DC VF IR Maximum DC Reverse Current At Rated DC Blocking Voltage @TJ=25 C @TJ=100 C CJ Typical Junction Capacitance Per Element (Note 1) TSTG Storage Temperature Range Maximum Ratings 40 375 0.70 10 100 800 -55 to +150 A A V Unit mA pF o o o C o NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 2. Thermal Resistance Junction To Case. Typical Thermal Resistance (Note 2) 1.4 ROJC C/W o TJ Operating Temperature Range -55 to +125 C o @TJ=25 C o |
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