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M58BW016BB80ZA6T Datasheet(PDF) 1 Page - STMicroelectronics |
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M58BW016BB80ZA6T Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 63 page 1/63 May 2003 M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4FEATURES SUMMARY s SUPPLY VOLTAGE –VDD = 2.7V to 3.6V for Program, Erase and Read –VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers –VPP = 12V for fast Program (optional) s HIGH PERFORMANCE – Access Time: 80, 90 and 100ns – 56MHz Effective Zero Wait-State Burst Read – Synchronous Burst Reads – Asynchronous Page Reads s HARDWARE BLOCK PROTECTION –WP pin Lock Program and Erase s SOFTWARE BLOCK PROTECTION – Tuning Protection to Lock Program and Erase with 64 bit User Programmable Pass- word (M58BW016B version only) s OPTIMIZED for FDI DRIVERS – Fast Program / Erase suspend latency time < 6µs – Common Flash Interface s MEMORY BLOCKS – 8 Parameters Blocks (Top or Bottom) – 31 Main Blocks s LOW POWER CONSUMPTION – 5µA Typical Deep Power Down – 60µA Typical Standby – Automatic Standby after Asynchronous Read s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code M58BW016xT: 8836h – Bottom Device Code M58BW016xB: 8835h Figure 1. Packages BGA LBGA80 (ZA) 10 x 8 ball array PQFP80 (T) |
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