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M74HCT10TTR Datasheet(PDF) 3 Page - STMicroelectronics |
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M74HCT10TTR Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 8 page  M74HCT10 3/8 DC SPECIFICATIONS AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns) CAPACITIVE CHARACTERISTICS 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/3 (per gate) Symbol Parameter Test Condition Value Unit VCC (V) TA = 25°C -40 to 85°C -55 to 125°C Min. Typ. Max. Min. Max. Min. Max. VIH High Level Input Voltage 4.5 to 5.5 2.0 2.0 2.0 V VIL Low Level Input Voltage 4.5 to 5.5 0.8 0.8 0.8 V VOH High Level Output Voltage 4.5 IO=-20 µA 4.4 4.5 4.4 4.4 V IO=-4.0 mA 4.18 4.31 4.13 4.10 VOL Low Level Output Voltage 4.5 IO=20 µA 0.0 0.1 0.1 0.1 V IO=4.0 mA 0.17 0.26 0.33 0.40 II Input Leakage Current 5.5 VI = VCC or GND ± 0.1 ± 1 ± 1 µA ICC Quiescent Supply Current 5.5 VI = VCC or GND 110 20 µA ∆ I CC Additional Worst Case Supply Current 5.5 Per Input pin VI = 0.5V or VI = 2.4V Other Inputs at VCC or GND IO = 0 2.0 2.9 3.0 mA Symbol Parameter Test Condition Value Unit VCC (V) TA = 25°C -40 to 85°C -55 to 125°C Min. Typ. Max. Min. Max. Min. Max. tTLH tTHL Output Transition Time 4.5 8 151922 ns tPLH tPHL Propagation Delay Time 4.5 14 22 28 33 ns Symbol Parameter Test Condition Value Unit VCC (V) TA = 25°C -40 to 85°C -55 to 125°C Min. Typ. Max. Min. Max. Min. Max. CIN Input Capacitance 5 101010 pF CPD Power Dissipation Capacitance (note 1) 46 pF |
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