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IXFH12N100Q Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFH12N100Q Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 4 page © 2002 IXYS All rights reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 1000 V V DGR T J = 25 °C to 150°C; R GS = 1 MΩ 1000 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25°C 12N100Q 12 A 10N100Q 10 A I DM T C = 25°C, 12N100Q 48 A pulse width limited by T JM 10N100Q 40 A I AR T C = 25°C 12N100Q 12 A 10N100Q 10 A E AR T C = 25°C 30 mJ dv/dt I S ≤ I DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 V/ns T J ≤ 150°C, RG = 2 Ω P D T C = 25°C 300 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6 mm (0.063 in) from case for 10 s 300 °C M d Mounting torque 1.13/10 Nm/lb.in. Weight TO-247 AD 6 g TO-268 4 g N-Channel Enhancement Mode Avalanche Rated Low Q g, High dv/dt Features IXYS advanced low Q g process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low R DS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Advantages Easy to mount Space savings High power density 97539D(12/02) TO-247 AD (IXFH) G = Gate D = Drain S = Source TAB = Drain HiPerFETTM Power MOSFETs Q Class TO-268 (D3) ( IXFT) (TAB) G S V DSS I D25 R DS(on) IXFH/IXFT12N100Q 1000 V 12 A 1.05 Ω Ω Ω Ω Ω IXFH/IXFT10N100Q 1000 V 10 A 1.20 Ω Ω Ω Ω Ω t rr ≤ ≤≤≤≤ 250 ns Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSS V GS = 0 V, ID = 3 mA 1000 V V GS(th) V DS = VGS, ID = 4 mA 2.5 5.5 V I GSS V GS = ±20 VDC, VDS = 0 ±100 nA I DSS V DS = 0.8 • VDSS T J = 25°C 50 µA V GS = 0 V T J = 125°C1 mA R DS(on) V GS = 10 V, ID = 0.5 ID25 12N100Q 1.05 Ω 10N100Q 1.20 Ω Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % |
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