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IXFH10N100Q Datasheet(PDF) 2 Page - IXYS Corporation |
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IXFH10N100Q Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 4 page IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. g fs V DS = 15 V; I D = 0.5 • ID25, pulse test 4 10 S C iss 2900 pF C oss V GS = 0 V, V DS = 25 V, f = 1 MHz 315 pF C rss 50 pF t d(on) 20 ns t r V GS = 10 V, V DS = 0.5 • VDSS, ID = 0.5 • ID25 23 ns t d(off) R G = 2 Ω (External), 40 ns t f 15 ns Q g(on) 90 nC Q gs V GS = 10 V, V DS = 0.5 • VDSS, ID = 0.5 • ID25 30 nC Q gd 40 nC R thJC 0.42 K/W R thCK (TO-247) 0.25 K/W Source-Drain Diode Characteristic Values (T J = 25°C, unless otherwise specified) Symbol Test Conditions min. typ. max. I S V GS = 0 V 12 A I SM Repetitive; pulse width limited by T JM 48 A V SD I F = IS, VGS = 0 V, 1.5 V Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr 200 ns Q RM I F = IS, -di/dt = 100 A/µs, VR = 100 V 0.6 µC I RM 7A TO-268 Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 1 2.2 2.54 .087 .102 A 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain 1 2 3 TO-247 AD (IXFH) Outline IXFH/IXFT 12N100Q IXFH/IXFT 10N100Q |
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