MJD122-1 datasheet(2/8 Pages) STMICROELECTRONICS

Part #	MJD122-1

Description	COMPLEMENTARY POWER DARLINGTON TRANSISTORS

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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2 / 8 page

MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4

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THERMAL DATA

ELECTRICAL CHARACTERISTICS (Tj =25 °C unless otherwise specified)

* Pulsed: Pulse duration = 300

µs, duty cycle ≤ 2%.

For PNP types voltage and current values are negative.

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max

6.25

100

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE =0)

VCB = 100 V

10

µA

ICEO

Collector Cut-off

Current (IB =0)

VCE =50 V

10

µA

ICEX

Collector Cut-off

Current (VBE = -1.5 V)

VCE = 100 V

Tj =125 °C

10

500

µA

IEBO

Emitter Cut-off Current

(IC =0)

VEB =5 V

2

mA

VCEO(sus)* Collector-Emitter

Sustaining Voltage

(IB =0)

IC = 30 mA

100

V

VCE(sat)*

Collector-Emitter

Saturation Voltage

IC =4 A

IC =8 A

IB =16 mA

IB =80 mA

2

4

V

VBE(sat)*

Base-Emitter

Saturation Voltage

IC =8 A

IB = 80 mA

4.5

V

VBE(on)*

Base-Emitter On

Voltage

IC =4 A

VCE = 4 V

2.8

V

hFE*

DC Current Gain

IC =4 A

IC =8 A

VCE =4 V

1000

100

12000

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