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MJE2955T Datasheet(PDF) 1 Page - STMicroelectronics |
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MJE2955T Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 4 page MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. INTERNAL SCHEMATIC DIAGRAM June 1997 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEO Collector-Emitter Voltage (IB = 0) 60 V VCBO Collector-Base Voltage (IE = 0) 70 V VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 10 A IB Base Current 6 A Ptot Total Power Dissipation at Tcase ≤ 25 oC75 W Tstg Storage Temperature -55 to 150 oC Tj Max. Operating Junction Temperature 150 oC For PNP types voltage and current values are negative. 1 2 3 TO-220 1/4 |
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