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MSC81020 Datasheet(PDF) 1 Page - STMicroelectronics |
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MSC81020 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 5 page October 1992 GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS .230 2L STUD (S016) hermetically sealed . EMITTER BALLASTED . REFRACTORY/GOLD METALLIZATION . LOW THERMAL RESISTANCE . HERMETIC STRIPAC® PACKAGE . POUT = 20 W MIN. WITH 10 dB GAIN @1 GHz DESCRIPTION The MSC81020 is a common base hermetically sealed silicon NPN microwave tranisitor utilizing a fishbone emitter ballasted geometry with a re- fractory/gold metallization system. This device is designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range. PIN CONNECTION BRANDING 81020 ORDER CODE MSC81020 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Uni t PDISS Power Dissipation* 35 W IC Device Current* 1.50 A VCC Collector-Supply Voltage* 35 V TJ Junction Temperature 200 °C TSTG Storage Temperature − 65 to +200 °C RTH(j-c) Junction-Case Thermal Resistance* 5.0 °C/W *Applies only to rated RF amplifier operation MSC81020 1. Collector 3. Emitter 2. Base THERMAL DATA 1/5 |
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