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MSC82003 Datasheet(PDF) 1 Page - STMicroelectronics |
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MSC82003 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 5 page October 1992 GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS .250 2LFL (S010) hermetically sealed . EMITTER BALLASTED . VSWR CAPABILITY ∞:1 @ RATED CONDITIONS . REFRACTORY/GOLD METALLIZATION . HERMETIC STRIPAC® PACKAGE . POUT = 3.0 W MIN. WITH 7.8 dB GAIN @2.0 GHz DESCRIPTION The MSC82003 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a re- fractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC82003 was designed for Class C amplifier applications in the 1.0 - 2.0 GHz frequency range. PIN CONNECTION BRANDING 82003 ORDER CODE MSC82003 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Uni t PDISS Power Dissipation* 21.8 W IC Device Current* 600 mA VCC Collector-Supply Voltage* 35 V TJ Junction Temperature 200 °C TSTG Storage Temperature − 65 to +200 °C RTH(j-c) Junction-Case Thermal Resistance* 8.0 °C/W *Applies only to rated RF amplifier operation MSC82003 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA 1/5 |
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