Electronic Components Datasheet Search |
|
MSC83303 Datasheet(PDF) 1 Page - STMicroelectronics |
|
MSC83303 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 5 page September 2, 1994 GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS .250 2LFL (S010) hermetically sealed . REFRACTORY/GOLD METALLIZATION . EMITTER BALLASTED . VSWR CAPABILITY ∞:1 @ RATED CONDITIONS . HERMETIC STRIPAC® PACKAGE . POUT = 3.0 W MIN. WITH 7.0 dB GAIN @3.0 GHz DESCRIPTION The MSC83303 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geome- try with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated con- ditions. The MSC83303 is designed for Class C amplifier/oscillator applications in the 1.0 - 3.0 GHz frequency range. PIN CONNECTION BRANDING 83303 ORDER CODE MSC83303 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Uni t PDISS Power Dissipation* (TC ≤ 50°C) 10.0 W IC Device Current* 540 mA VCC Collector-Supply Voltage* 30 V TJ Junction Temperature 200 °C TSTG Storage Temperature − 65 to +200 °C RTH(j-c) Junction-Case Thermal Resistance* 12 °C/W *Applies only to rated RF amplifier operation MSC83303 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA 1/5 |
Similar Part No. - MSC83303 |
|
Similar Description - MSC83303 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |