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PRELIMINARY DATA

May 2000

PD54008 - PD54008S

RF POWER TRANSISTORS

The LdmoST Plastic FAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 8 W with 10 dB gain @ 500 MHz / 7.5V

• NEW RF PLASTIC PACKAGE

DESCRIPTION

The PD54008 is a common source N-Channel, en-

hancement-mode, lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 7V in common source mode at frequencies of

up to 1GHz. PD54008 boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS tech-

nology mounted in the first true SMD plastic RF

power package, PowerSO-10RF. PD54008’s su-

perior linearity performance makes it an ideal so-

lution for portable radio.

The PowerSO-10 plastic package, designed to of-

fer high reliability, is the first ST JEDEC approved,

high power SMD package. It has been specially

optimized for RF needs and offers excellent RF

performances and ease of assembly.

PowerSO-10RF

(Formed Lead)

ORDER CODE

BRANDING

XPD54008

PowerSO-10RF

(Straight Lead)

ORDER CODE

BRANDING

PD54008

PD54008S

XPD54008S

Symbol

Parameter

Value

Unit

Drain Source Voltage

25

V

Gate-Source Voltage

±20

V

Drain Current

5

A

73

W

Max. Operating Junction Temperature

165

0

C

Storage Temperature

-65 to 165

0

C

THERMAL DATA

Junction-Case Thermal Resistance

1.3