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SIE800DF Datasheet(PDF) 1 Page - Vishay Siliconix |
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SIE800DF Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Vishay Siliconix SiE800DF New Product Document Number: 73199 S-60784-Rev. D, 08-May-06 www.vishay.com 1 N-Channel 30-V (D-S) MOSFET FEATURES • Extremely Low Qgd WFET Technology for Low Switching Losses • TrenchFET® Power MOSFET • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for Double-Sided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through • 100 % Rg and UIS Tested APPLICATIONS •VRM • DC/DC Conversion: High-Side • Synchronous Rectification PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) a Qg (Typ) Silicon Limit Package Limit 30 0.0072 at VGS = 10 V 90 50 12 nC 0.0115 at VGS = 4.5 V 73 50 Package Drawing Ordering Information: SiE800DF-T1-E3 (Lead (Pb)-free) Top View Bottom View Top surface is connected to pins 1, 5, 6, and 10 10 D S S G D D S S G D PolarPAK 1 43 2 5 67 8 9 D DS G D 5 4 3 2 1 6 7 8 9 10 For Related Documents N-Channel MOSFET G D S Notes: a. Package limited is 50 A. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 sec. d. See Solder Profile (http://www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 90 (Silicon Limit) A 50a (Package Limit) TC = 70 °C 50a TA = 25 °C 20.6b, c TA = 70 °C 16.5b, c Pulsed Drain Current IDM 60 Continuous Source-Drain Diode Current TC = 25 °C IS 50a TA = 25 °C 4.3b, c Single Pulse Avalanche Current L = 0.1 mH IAS 40 Avalanche Energy EAS 80 mJ Maximum Power Dissipation TC = 25 °C PD 104 W TC = 70 °C 66 TA = 25 °C 5.2b, c TA = 70 °C 3.3b, c Operating Junction and Storage Temperature Range TJ, Tstg - 50 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 RoHS COMPLIANT |
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