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ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

THS6182

SLLS544H – SEPTEMBER 2002 – REVISED JUNE 2007

ELECTRICAL

THS6132

Supply voltage

±16.5 V

Input voltage

±V

CC

Output current

1000 mA

Differential input voltage

±2 V

THERMAL

Maximum junction temperature, any condition

150

°C

125

°C

Storage temperature

65

°C to 150°C

ESD

HBM

2000 V

ESD ratings

CDM

1500 V

MM

200 V

(1)

The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may

cause permanent damage. Exposure to absolute-maximum-rated conditions for extended periods may degrade device reliability. These

are stress ratings only, and functional operation of the device at these or any other conditions beyond those ispecified is not implied.

(2)

The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may

result in reduced reliability and/or lifetime of the device.

over recommended operating free-air temperature range, T

Gain = +5, I

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

NOISE/DISTORTION PERFORMANCE

Gain = +9.5, 163 kHz to 1.1 MHz DMT,

MTPR

Multitone power ratio

-76

dBc

+20 dBm Line Power, See Figure 1 for circuit

Gain =+5, 25 kHz to 138 kHz with MTPR signal applied,

Receive band spill-over

-95

dBc

See Figure 1 for circuit

Differential load = 200

Ω

-88

dBc

Differential load = 50

Ω

-70

HD

f = 1 MHz

Differential load = 200

Ω

-107

dBc

Differential load = 50

Ω

-84

Input voltage noise

3.2

nV/

√Hz

+Input

1.5

Input current noise

pA/

√Hz

-Input

10

-65

dBc

Crosstalk

-60

dBc

3

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