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STN3PF06 Datasheet(PDF) 3 Page - STMicroelectronics |
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STN3PF06 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 12 page STN3PF06 Electrical ratings 3/12 1 Electrical ratings Note: For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 60 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC = 25 °C 2.5 A ID Drain current (continuous) at TC = 100 °C 1.5 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 10 A PTOT Total dissipation at TC = 25 °C 2.5 W Derating factor 0.02 W/°C dv/dt (2) 2. ISD ≤ 3A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS Peak diode recovery voltage slope 6 V/ns Tj Tstg Operating junction temperature Storage temperature -65 to 150 °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-pcb Thermal resistance junction-pcb board max 50 °C/W Rthj-a Thermal resistance junction-ambient max(1) 1. Surface mounted 62.5 °C/W Tl Maximum lead temperature for soldering purpose 260 °C |
Similar Part No. - STN3PF06_08 |
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Similar Description - STN3PF06_08 |
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