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PD25025F Datasheet(PDF) 1 Page - PEAK electronics GmbH |
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PD25025F Datasheet(HTML) 1 Page - PEAK electronics GmbH |
1 / 4 page PD25025F 25 W, 2.3GHz - 2.5GHz, N-Channel E-Mode, Lateral MOSFET Introduction The PD25025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor ( 2.3GHz - 2.5GHz Class AB wireless base station LDMOS) RF power transistor suitable for amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance, reliability, and thermal resistance. Packaged in an industry-standard CuW package capable of deliver - ing a minimum output power of 25 W, it is ideally suited for today's RF power amplifier applications. Figure 1. Available Packages Features Table 1. Thermal Characteristics Table 2. Absolute Maximum Ratings* * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress rat- ings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from elec- trostatic charge. Reasonable precautions in han- dling and packaging MOS devices should be observed. PD25025F (flanged) Parameter Sym Value Unit Thermal Resistance, Junction to Case: R JC 2.1 °C/W Parameter Sym Value Unit Drain-source Voltage VDSS 65 Vdc Gate-source Voltage VGS –0.5, +15 Vdc Drain Current—Continuous ID 4.25 Adc Total Dissipation at TC = 25 °C: PD 120.7 W Derate Above 25 °C: — 0.69 W/°C Operating Junction Tempera- ture TJ 200 °C Storage Temperature Range TSTG –65, +150 °C Minimum (V) Class HBM 500 1B MM 50 A CDM 1500 4 • Application Specific Performance, 2.5 GHz • Typical 2-Tone Performance Average Load Power – 12.5 W ηD – 30% Power Gain – 12.5 dB IMD3: -30dBc @ -100kHz/ +100KHz • Typical CW Performance Average Load Power – 25 W ηD – 40% Power Gain – 12.0 dB |
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